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2
2 3
3 4
1
1 4
Parallel
SO
2 T-
27
APT2X101S20J
"UL Recognized"
APT2X101S20J
200V 120A
ISOTOP fi
file # E145592
DUAL DIE ISOTOP(R) PACKAGE
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
* Rectifiers in Switchmode Power
Supplies (SMPS) * Free Wheeling Diode in Low Voltage Converters
PRODUCT FEATURES
* * * *
Ultrafast Recovery Times Soft Recovery Characteristics Popular SOT-227 Package Rugged Avalanche Energy Rated * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
PRODUCT BENEFITS
* * * * *
Low Losses Low Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Density
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG EAVL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2X101S20J UNIT
200
Volts
Maximum Average Forward Current (TC = 105C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Operating and StorageTemperature Range Avalanche Energy (2A, 50mH)
120 213 1000 -55 to 150 100
C mJ Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V
Microsemi Website - http://www.microsemi.com
MIN
TYP
MAX
UNIT
.89 1.06 .76
.95
Volts
VR = 200V, TJ = 125C
40 470
053-6023 Rev C
pF
7-2006
VR = 200V
2
mA
DYNAMIC CHARACTERISTICS
Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -700A/s VR = 133V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 133V, TC = 125C Test Conditions IF = 100A, diF/dt = -200A/s VR = 133V, TC = 25C MIN TYP
APT2X101S20J MAX UNIT ns nC
70 240 6 110 690 11 95 1750 32 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC VIsolation WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT C/W Volts
.33 2500 1.03 29.2 10 1.1
oz g lb*in N*m
Torque
Maximum Terminal & Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.25 0.20
D = 0.9
0.7
0.5 0.15 0.10 0.05 0 0.3 Note:
PDM
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE 10-3 10-2 10-1
Z
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
JC
1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ ( C)
0.0673 Dissipated Power (Watts) 0.0182 0.361 5.17 0.188
TC ( C)
0.0743
053-6023 Rev C
7-2006
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
360 300
IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns)
120 100 80 60 40 20 0
TJ = 125C VR = 133V
APT2X101S20J
100A 130A 50A
240 180 120 TJ = 125C 60 0 TJ = 150C 0 TJ = -55C TJ = 25C
0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 133V
0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 40 35 30 25 20 15 10 5 0 50A 100A
TJ = 125C VR = 133V
2500
Qrr, REVERSE RECOVERY CHARGE (nC)
2000 130A 100A
130A
1500
1000 50A 500
200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Qrr t rr t rr I RRM
IF(AV) (A)
0
0
0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 250
Duty cycle = 0.5 TJ = 150C
Kf, DYNAMIC PARAMETERS (Normalized to 700A/s)
200
150
Qrr
100
50
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 6000 5000 4000 3000 2000 1000 0
0
75 100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 200 100
PEAK AVALANCHE CURRENT (A)
0
25
50
CJ, JUNCTION CAPACITANCE (pF)
50
10 5
7-2006
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
1
1
1
10 100 1000 2500 Time in Avalanche (s) Figure 9. Single Pulse UIS SOA
053-6023 Rev C
APT2X101S20J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT20M20LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
7-2006
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Parallel
APT2X101S20J
Cathode 1 Anode 1
053-6023 Rev C
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 2
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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